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#51
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On 16 Dec 2006 17:49:19 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: Del Cecchi wrote: David Kanter wrote: Yousuf Khan wrote: David Kanter wrote: You heard Del say no such thing. I said there was a heated debate, which is a long way from "huge fight". Back in the day there was honest disagreement over the magnitude of the power and performance difference. My apologies if I mischaracterized your statement. The point remains: certain elements within IBM clearly did not believe that SOI was worth it, and wanted to stick with bulk. And SOI is not just being used for "high end stuff". It just isn't being used for Standard Cell ASIC chips. Perhaps our definition of high end vary... SOI adds substantial costs, it would also force Intel to totally rework their circuit stuff, etc. etc. And frankly, SOI is worth less and less performance at every node. Gee, I haven't heard that. Who told you that? Have you done measurements? Run 3D field simulations? Or was this Intel spin? Remember sometimes spin is true and sometimes it isn't. This was information from an engineer in Canada who used to post to comp.arch. I have no particular reason to disbelieve what he said, although I'm certainly open to listening to other POVs. I believe I've already indicated that I'm not an EE, physicist nor do I run sims. I would point out that there is some information on the relative merits of the different processes: If you look back at what you posted, Intel is apparently considering SOI for the 32nm and 22nm nodes. Ther appears to be a umm, dichotomy in your reasoning here. http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? Sure, I can buy a cell phone for 20 dollars at walmart and it provides a useful service to the average person, even in a LDC. What use is a PC to the average person in a LDC? It's a rather useful educational tool. Word processing, spread sheets, email, wikipedia, developing. All sorts of things you can do. From what I've observed, the most useful part of PCs/Internet for students is as a tool for plagiarism...and theft.:-( And spread sheets and english word processing, english wikipedia, all |
#52
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On 16 Dec 2006 17:49:19 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: Del Cecchi wrote: David Kanter wrote: Yousuf Khan wrote: David Kanter wrote: You heard Del say no such thing. I said there was a heated debate, which is a long way from "huge fight". Back in the day there was honest disagreement over the magnitude of the power and performance difference. My apologies if I mischaracterized your statement. The point remains: certain elements within IBM clearly did not believe that SOI was worth it, and wanted to stick with bulk. And SOI is not just being used for "high end stuff". It just isn't being used for Standard Cell ASIC chips. Perhaps our definition of high end vary... SOI adds substantial costs, it would also force Intel to totally rework their circuit stuff, etc. etc. And frankly, SOI is worth less and less performance at every node. Gee, I haven't heard that. Who told you that? Have you done measurements? Run 3D field simulations? Or was this Intel spin? Remember sometimes spin is true and sometimes it isn't. This was information from an engineer in Canada who used to post to comp.arch. I have no particular reason to disbelieve what he said, although I'm certainly open to listening to other POVs. I believe I've already indicated that I'm not an EE, physicist nor do I run sims. I would point out that there is some information on the relative merits of the different processes: If you look back at what you posted, Intel is apparently considering SOI for the 32nm and 22nm nodes. Ther appears to be a umm, dichotomy in your reasoning here. |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? |
#53
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George Macdonald wrote: On 16 Dec 2006 17:49:19 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: Del Cecchi wrote: David Kanter wrote: Yousuf Khan wrote: David Kanter wrote: You heard Del say no such thing. I said there was a heated debate, which is a long way from "huge fight". Back in the day there was honest disagreement over the magnitude of the power and performance difference. My apologies if I mischaracterized your statement. The point remains: certain elements within IBM clearly did not believe that SOI was worth it, and wanted to stick with bulk. And SOI is not just being used for "high end stuff". It just isn't being used for Standard Cell ASIC chips. Perhaps our definition of high end vary... SOI adds substantial costs, it would also force Intel to totally rework their circuit stuff, etc. etc. And frankly, SOI is worth less and less performance at every node. Gee, I haven't heard that. Who told you that? Have you done measurements? Run 3D field simulations? Or was this Intel spin? Remember sometimes spin is true and sometimes it isn't. This was information from an engineer in Canada who used to post to comp.arch. I have no particular reason to disbelieve what he said, although I'm certainly open to listening to other POVs. I believe I've already indicated that I'm not an EE, physicist nor do I run sims. I would point out that there is some information on the relative merits of the different processes: If you look back at what you posted, Intel is apparently considering SOI for the 32nm and 22nm nodes. Ther appears to be a umm, dichotomy in your reasoning here. Not really. When I say SOI, I mean PD-SOI. Intel plans to use FD-SOI, which is a rather different beast. No dichotomy there... |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... |
#54
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snigger |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. |
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From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal |
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As for SOI, it's my understanding that, like many other subjects of study, it's what is *not* in published papers which matters to getting it "right". |
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The "numbers" are only one point in time! |
#55
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snigger You don't seem to appreciate the difference between FD and PD SOI. As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. |
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Either way, there is clearly no universal truth regarding the benefits of SOI. |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. It's not clear to me exactly how the Chartered/AMD/IBM deal evolved. From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal with demand for older parts), so it's not clear how much R&D chartered really spent. If the deal was "IBM/AMD give chartered process tech" that's a little different than "Chartered pays up 1/3 the cost of R&D". |
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Also, just because David was wrong about whether a foundry would use SOI does not mean his hard numerical data, which comes from refereed papers is invalid. |
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As for SOI, it's my understanding that, like many other subjects of study, it's what is *not* in published papers which matters to getting it "right". Sure, reading papers won't necessarily tell a random knowledgeable person how to implement a PD-SOI process. However, they will tell someone what results they can expect to achieve in terms of performance benefits. What they won't say is the implementation costs, which are, as I indicated, probably more important for Intel than for others. Their business model has always focused on providing fairly high performance MPUs at very attractive prices; this is in direct contrast to say, DEC, which focused on the highest performance. |
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The "numbers" are only one point in time! That's certainly true, and I'd expect the numbers to change a bit. However, I haven't heard any compelling evidence why the performance for a PD-SOI process would change more (or less) than a bulk process over time. A priori, my expectation would be that the amount of improvement over time is equal or perhaps varies with the quantity produced. |
#56
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On 19 Dec 2006 14:57:22 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: snigger You don't seem to appreciate the difference between FD and PD SOI. As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. What you don't seem to umm, appreciate is that the IBM/AMD process has been in full proven production in several SOTA fabs for 3 years now... and well in to production ramp on its 3rd iteration. |
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That you trot out two diametrically opposed cases in one post and then try to cover it up with speculative maybe this & maybe that, only demonstrates what a dither you are in. |
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This is complex stuff which is only fathomable and "known" by a few people - pretending to have deep insights into further developments is just so much journo-babble . |
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Either way, there is clearly no universal truth regarding the benefits of SOI. Hmm, it clearly spanked Intel for a while! |
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The symmetry SOI allows for DSL was clearly a winner. |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. It's not clear to me exactly how the Chartered/AMD/IBM deal evolved. From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal with demand for older parts), so it's not clear how much R&D chartered really spent. If the deal was "IBM/AMD give chartered process tech" that's a little different than "Chartered pays up 1/3 the cost of R&D". Seems like you've taken such a high "vantage point" that the clouds have obscured your view. If you were paying attention, you'd know that the "older parts" story is just another red herring. |
#57
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George Macdonald wrote: On 19 Dec 2006 14:57:22 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: snigger You don't seem to appreciate the difference between FD and PD SOI. As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. What you don't seem to umm, appreciate is that the IBM/AMD process has been in full proven production in several SOTA fabs for 3 years now... and well in to production ramp on its 3rd iteration. I'm failing to see how this is an argument for Intel using PD-SOI.... |
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That you trot out two diametrically opposed cases in one post and then try to cover it up with speculative maybe this & maybe that, only demonstrates what a dither you are in. No, I'm pointing out a number of reasons why you are wrong. That some of the reasons are mutually exclusive is irrelevant...you'd still have to overcome both objections. |
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This is complex stuff which is only fathomable and "known" by a few people - pretending to have deep insights into further developments is just so much journo-babble . It's really not that hard to understand: partially depleted != fully depleted. Intel expressed interest in FD SOI, not PD SOI. |
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Here's a link for you, straight from the horses mouth: http://www.intel.com/technology/maga...hr-qa-0806.pdf See page 4: What about other manufacturers' use of "silicon on insulator" (SOI)? Intel's superior transistor performance and leakage have been achieved by meticulous engineering of "bulk CMOS" techniques, which offer the highest performance and best value to our customers. SOI adds substantial costs and complexity to the process. A comparison of published transistor switching speeds shows Intel's bulk transistors to have faster switching speeds at comparable leakage currents compared to the best published numbers on SOI transistors. A more troubling issue is that SOI has higher "thermal resistance" than bulk CMOS. As a result, SOI transistors are forced to run at temperatures higher than necessary. Higher operating temperatures could cause long-term reliability problems. So does Intel rule out SOI completely? No. There is a type of SOI called fully depleted (FD-SOI) that has merits beyond the partially depleted SOI that some of our competitors are using today. FD-SOI has been under active evaluation for some time at Intel. That's from the head of process development at Intel. |
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Either way, there is clearly no universal truth regarding the benefits of SOI. Hmm, it clearly spanked Intel for a while! That's a good one: AMD certainly was ahead of Intel for a while, and now you're trying to argue that this is due to their process technology? Maybe you forgot about uarch? |
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The symmetry SOI allows for DSL was clearly a winner. There's nothing stopping Intel from using strained silicon with bulk. |
| http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. It's not clear to me exactly how the Chartered/AMD/IBM deal evolved. From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal with demand for older parts), so it's not clear how much R&D chartered really spent. If the deal was "IBM/AMD give chartered process tech" that's a little different than "Chartered pays up 1/3 the cost of R&D". Seems like you've taken such a high "vantage point" that the clouds have obscured your view. If you were paying attention, you'd know that the "older parts" story is just another red herring. You're ignoring the point: did chartered pay for R&D, or just receive? There's a whole world of difference. |
#58
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On 21 Dec 2006 14:38:18 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: George Macdonald wrote: On 19 Dec 2006 14:57:22 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: snigger You don't seem to appreciate the difference between FD and PD SOI. As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. What you don't seem to umm, appreciate is that the IBM/AMD process has been in full proven production in several SOTA fabs for 3 years now... and well in to production ramp on its 3rd iteration. I'm failing to see how this is an argument for Intel using PD-SOI.... I have not said they would or should - you're now arguing with some imaginary entity. |
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That you trot out two diametrically opposed cases in one post and then try to cover it up with speculative maybe this & maybe that, only demonstrates what a dither you are in. No, I'm pointing out a number of reasons why you are wrong. That some of the reasons are mutually exclusive is irrelevant...you'd still have to overcome both objections. Umm your attempt to cover your dual turd up has not worked! This is complex stuff which is only fathomable and "known" by a few people - pretending to have deep insights into further developments is just so much journo-babble . It's really not that hard to understand: partially depleted != fully depleted. Intel expressed interest in FD SOI, not PD SOI. Apparently too hard for you to even grasp the degree of difficulty of either. Again you're inventing a strawman you can argue over. Here's a link for you, straight from the horses mouth: http://www.intel.com/technology/maga...hr-qa-0806.pdf See page 4: What about other manufacturers' use of "silicon on insulator" (SOI)? Intel's superior transistor performance and leakage have been achieved by meticulous engineering of "bulk CMOS" techniques, which offer the highest performance and best value to our customers. SOI adds substantial costs and complexity to the process. A comparison of published transistor switching speeds shows Intel's bulk transistors to have faster switching speeds at comparable leakage currents compared to the best published numbers on SOI transistors. A more troubling issue is that SOI has higher "thermal resistance" than bulk CMOS. As a result, SOI transistors are forced to run at temperatures higher than necessary. Higher operating temperatures could cause long-term reliability problems. So does Intel rule out SOI completely? No. There is a type of SOI called fully depleted (FD-SOI) that has merits beyond the partially depleted SOI that some of our competitors are using today. FD-SOI has been under active evaluation for some time at Intel. That's from the head of process development at Intel. And Intel has not done production SOI so they have the opinion of a bystander - their feeble attempts to belittle others' success is given the lie by the past 3.5 years of floundering. |
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Bottom line: Intel knows no more about IBM/AMD's process than IBM/AMD knows about theirs. |
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The above little diatribe lives in blissful ignorance -- one would assume results of their lab work -- of the fact that IBM/AMD's SOI process has been running cooler for years now. |
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Hate is a powerful emotion... one which clouds the focus... and apparently leads to the issuance of blind propaganda. Believe it if you wish |
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Either way, there is clearly no universal truth regarding the benefits of SOI. Hmm, it clearly spanked Intel for a while! That's a good one: AMD certainly was ahead of Intel for a while, and now you're trying to argue that this is due to their process technology? Maybe you forgot about uarch? The evidence is clear from the results. That you would argue this only clarifies your "gad-fly" status. |
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The symmetry SOI allows for DSL was clearly a winner. There's nothing stopping Intel from using strained silicon with bulk. Yes, they eventually got it working in some fashion - it's a nastier straining problem though. I'd have thought that from the many available diagrams this would be obvious to someone without a Chemistry background... but maybe not. Intel *did* fall behind on this and the parallel delays and evential clock speeds in their different 90nm uarchs was some evidence of this. |
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Oh, BTW did they pay up on the patent license on straining yet?;-) http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. It's not clear to me exactly how the Chartered/AMD/IBM deal evolved. From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal with demand for older parts), so it's not clear how much R&D chartered really spent. If the deal was "IBM/AMD give chartered process tech" that's a little different than "Chartered pays up 1/3 the cost of R&D". Seems like you've taken such a high "vantage point" that the clouds have obscured your view. If you were paying attention, you'd know that the "older parts" story is just another red herring. You're ignoring the point: did chartered pay for R&D, or just receive? There's a whole world of difference. Irrelevant. Are you now going to tell that "Copy Exact" is nothing... a mere detail?... or is it another Intel coup? Reproducing a fab plant is no simple matter - even repeating is hard enough. That an independent foundry could be whipped into *advanced* shape in relatively short order speaks to the success of the process & methods... otherwise why did DaveW suggest it could not happen?? |
#59
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George Macdonald wrote: On 21 Dec 2006 14:38:18 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: George Macdonald wrote: On 19 Dec 2006 14:57:22 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: snigger You don't seem to appreciate the difference between FD and PD SOI. As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. What you don't seem to umm, appreciate is that the IBM/AMD process has been in full proven production in several SOTA fabs for 3 years now... and well in to production ramp on its 3rd iteration. I'm failing to see how this is an argument for Intel using PD-SOI.... I have not said they would or should - you're now arguing with some imaginary entity. Then what is your point about the IBM/AMD fabs having used SOI for several years regarding? I'm sorry if I didn't make the connection. |
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This is complex stuff which is only fathomable and "known" by a few people - pretending to have deep insights into further developments is just so much journo-babble . It's really not that hard to understand: partially depleted != fully depleted. Intel expressed interest in FD SOI, not PD SOI. Apparently too hard for you to even grasp the degree of difficulty of either. Again you're inventing a strawman you can argue over. Here's a link for you, straight from the horses mouth: http://www.intel.com/technology/maga...hr-qa-0806.pdf See page 4: What about other manufacturers' use of "silicon on insulator" (SOI)? Intel's superior transistor performance and leakage have been achieved by meticulous engineering of "bulk CMOS" techniques, which offer the highest performance and best value to our customers. SOI adds substantial costs and complexity to the process. A comparison of published transistor switching speeds shows Intel's bulk transistors to have faster switching speeds at comparable leakage currents compared to the best published numbers on SOI transistors. A more troubling issue is that SOI has higher "thermal resistance" than bulk CMOS. As a result, SOI transistors are forced to run at temperatures higher than necessary. Higher operating temperatures could cause long-term reliability problems. So does Intel rule out SOI completely? No. There is a type of SOI called fully depleted (FD-SOI) that has merits beyond the partially depleted SOI that some of our competitors are using today. FD-SOI has been under active evaluation for some time at Intel. That's from the head of process development at Intel. And Intel has not done production SOI so they have the opinion of a bystander - their feeble attempts to belittle others' success is given the lie by the past 3.5 years of floundering. Again, I don't think Intel's past 3.5 years of floundering have anything to do with process related issues. Intel's 130nm products were quite competitive with AMD's; at 90nm, I certainly agree that Intel's server and desktop offerings were looking anemic. However, their mobile offers look quite good. It's hard to say how Intel's 65nm parts will play against AMD's...but right now they look to be doing quite well based on preliminary data. Given that the bag is decidedly mixed, I find it hard to see any evidence that Intel's problems in the last 3-4 years were process related as you implied earlier. Microarchitecturally related: absolutely. But I can find no fault in the process folks. |
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Bottom line: Intel knows no more about IBM/AMD's process than IBM/AMD knows about theirs. I don't recall claiming anything of that nature, rather, I claimed that PD-SOI does not appear to have made sense for Intel's process, production, etc. etc. |
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The above little diatribe lives in blissful ignorance -- one would assume results of their lab work -- of the fact that IBM/AMD's SOI process has been running cooler for years now. Perhaps you could provide proof that "IBM/AMD's SOI process has been running cooler for years now."? I have yet to see any...and try to remember, your claim has to do with process only, not microarchitecture. |
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Hate is a powerful emotion... one which clouds the focus... and apparently leads to the issuance of blind propaganda. Believe it if you wish I certainly don't take Dr. Bohr's words at face value, rather I take it as rather decisive proof that Intel finds PD-SOI unattractive, but FD-SOI much more interesting...as I claimed before. |
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Either way, there is clearly no universal truth regarding the benefits of SOI. Hmm, it clearly spanked Intel for a while! That's a good one: AMD certainly was ahead of Intel for a while, and now you're trying to argue that this is due to their process technology? Maybe you forgot about uarch? The evidence is clear from the results. That you would argue this only clarifies your "gad-fly" status. I don't think so. Let's say that only process and uarch impact performance/heat/power. Suppose chip A is 20% faster (or cooler) than chip B. You're claiming this implies the process that chip A was manufactured in is faster (or cooler) than the process for chip B. I don't think this is reasonable. Suppose the microarchitecture for chip B is so inefficient that it reduces speed by 30% (or increases heat/power draw by 30%) then it would turn out that the process for B was actually 'better'. |
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My point is you have not conducted any analysis indicating that a SOI process is 'better', the numbers for 65nm certainly don't seem to support it. Moreover, you haven't accounted for the additional cost of SOI wafers, redesigning circuits to use SOI friendly techniques, yield losses due to increased fragility, etc. etc. |
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The symmetry SOI allows for DSL was clearly a winner. There's nothing stopping Intel from using strained silicon with bulk. Yes, they eventually got it working in some fashion - it's a nastier straining problem though. I'd have thought that from the many available diagrams this would be obvious to someone without a Chemistry background... but maybe not. Intel *did* fall behind on this and the parallel delays and evential clock speeds in their different 90nm uarchs was some evidence of this. I don't think so, they were all capped due to frequency. |
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Oh, BTW did they pay up on the patent license on straining yet?;-) http://www.realworldtech.com/page.cf...005001504&p=14 This article, written by David Wang, shows a cross comparison of different process technologies. In looking at the 65nm nodes, we can compare the IBM process to the joint IBM/AMD/Toshiba/Sony. It appears that the Ion for ITSA is slightly higher, while Intel's Ioff is about 2x lower. Of course, Intel's high Vt transistors have substantially less leakage (factor of ~10) than the low Vt, at the cost of worse Ion performance. With all due respect to Dave Wang, somtime around the time of that article, Dave stated categorically right in this NG that we would never see SOI 65nm from Chartered... and now?? How does that matter? David's numbers can all be checked against the IEDM presentations/papers AFAIK. The numbers say it all... The point is kinda clear - he was totally off the mark on SOI and its accessability to a foundry. It's not clear to me exactly how the Chartered/AMD/IBM deal evolved. From my vantage point, it looks like both AMD and IBM wanted Chartered to have a SOI line open (for the Xbox360 project and to help AMD deal with demand for older parts), so it's not clear how much R&D chartered really spent. If the deal was "IBM/AMD give chartered process tech" that's a little different than "Chartered pays up 1/3 the cost of R&D". Seems like you've taken such a high "vantage point" that the clouds have obscured your view. If you were paying attention, you'd know that the "older parts" story is just another red herring. You're ignoring the point: did chartered pay for R&D, or just receive? There's a whole world of difference. Irrelevant. Are you now going to tell that "Copy Exact" is nothing... a mere detail?... or is it another Intel coup? Reproducing a fab plant is no simple matter - even repeating is hard enough. That an independent foundry could be whipped into *advanced* shape in relatively short order speaks to the success of the process & methods... otherwise why did DaveW suggest it could not happen?? Quite frankly this whole tangent is irrelevant. David's numbers are quite solid. If you have proof they are wrong, please show it. Rather than casting aspersions on the data in the article by claiming that the author made a mistake once upon a time. |
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On 22 Dec 2006 21:54:29 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: George Macdonald wrote: On 21 Dec 2006 14:38:18 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: George Macdonald wrote: On 19 Dec 2006 14:57:22 -0800, "David Kanter" <dkanter (AT) gmail (DOT) com> wrote: snigger You don't seem to appreciate the difference between FD and PD SOI.As I understand it, there are rather substantial differences; for instance FD doesn't suffer from the floating body effect as bad (although it appears that short channel effects can worsen). The bottom line is that just because Intel plans to use SOI in the future: 1. Does not mean it will happen - Intel planned to have a 10GHz CPU out by now, plans always can change 2. Does not mean that the SOI process Intel uses will be similar to the AMD/IBM one - they may skip PD-SOI altogether, and opt for fully depleted SOI. What you don't seem to umm, appreciate is that the IBM/AMD process has been in full proven production in several SOTA fabs for 3 years now... and well in to production ramp on its 3rd iteration. I'm failing to see how this is an argument for Intel using PD-SOI.... I have not said they would or should - you're now arguing with some imaginary entity. Then what is your point about the IBM/AMD fabs having used SOI for several years regarding? I'm sorry if I didn't make the connection. The connection is that you are posting contadictory info/opinion. See my 1st post in the thread for one example. Another is that "And frankly, SOI is worth less and less performance at every node" along with the fact that you said Intel is considering SOI for 22nm & 32nm. You try to wriggle out of both by separating PD from FD... after the fact. You just can't seem to help panning AMD's direction while praising Intel's but the reasoning is all twisted to hell. |
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Again, I don't think Intel's past 3.5 years of floundering have anything to do with process related issues. Intel's 130nm products were quite competitive with AMD's; at 90nm, I certainly agree that Intel's server and desktop offerings were looking anemic. However, their mobile offers look quite good. It's hard to say how Intel's 65nm parts will play against AMD's...but right now they look to be doing quite well based on preliminary data. Given that the bag is decidedly mixed, I find it hard to see any evidence that Intel's problems in the last 3-4 years were process related as you implied earlier. Microarchitecturally related: absolutely. But I can find no fault in the process folks. Intel's P4 uarch was supposed to be designed for the higher speeds - apparently the process could not deliver. |
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The Dothan P-M had the same delay as the P4, while they sorted out the process and if you look back, the P-M and derivatives have been stuck at <=2GHz for 3 years now. I'd have to assume the process plays some part in this umm, stall. |
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Bottom line: Intel knows no more about IBM/AMD's process than IBM/AMD knows about theirs. I don't recall claiming anything of that nature, rather, I claimed that PD-SOI does not appear to have made sense for Intel's process, production, etc. etc. And yet you want to believe all the Intel anti-SOI propaganada. |
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The above little diatribe lives in blissful ignorance -- one would assume results of their lab work -- of the fact that IBM/AMD's SOI process has been running cooler for years now. Perhaps you could provide proof that "IBM/AMD's SOI process has been running cooler for years now."? I have yet to see any...and try to remember, your claim has to do with process only, not microarchitecture. The proof is all around - it's been common knowledge |
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and I have provided the "proof" several times now. You just don't listen and I'm not going to repeat myself again! |
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Either way, there is clearly no universal truth regarding the benefits of SOI. Hmm, it clearly spanked Intel for a while! That's a good one: AMD certainly was ahead of Intel for a while, and now you're trying to argue that this is due to their process technology? Maybe you forgot about uarch? The evidence is clear from the results. That you would argue this only clarifies your "gad-fly" status. I don't think so. Let's say that only process and uarch impact performance/heat/power. Suppose chip A is 20% faster (or cooler) than chip B. You're claiming this implies the process that chip A was manufactured in is faster (or cooler) than the process for chip B. I don't think this is reasonable. Suppose the microarchitecture for chip B is so inefficient that it reduces speed by 30% (or increases heat/power draw by 30%) then it would turn out that the process for B was actually 'better'. Quite a tangled web you're weaving there. |
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My point is you have not conducted any analysis indicating that a SOI process is 'better', the numbers for 65nm certainly don't seem to support it. Moreover, you haven't accounted for the additional cost of SOI wafers, redesigning circuits to use SOI friendly techniques, yield losses due to increased fragility, etc. etc. Quite how you've missed the fact that the P4 is known as a "heater" boggles the mind. Even the anal...ysts talk about it daily. |
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Blaming it on the uarch, when the two are supposed to be designed to work in unison, is a complete red herring. |
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The symmetry SOI allows for DSL was clearly a winner. There's nothing stopping Intel from using strained silicon with bulk. Yes, they eventually got it working in some fashion - it's a nastier straining problem though. I'd have thought that from the many available diagrams this would be obvious to someone without a Chemistry background... but maybe not. Intel *did* fall behind on this and the parallel delays and evential clock speeds in their different 90nm uarchs was some evidenceof this. I don't think so, they were all capped due to frequency. Yup - even the P-M has been capped for several years now... until the most recent releases... but it had nothing to do with the process?Ô_õ |
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Quite frankly this whole tangent is irrelevant. David's numbers are quite solid. If you have proof they are wrong, please show it. Rather than casting aspersions on the data in the article by claiming that the author made a mistake once upon a time. It's no claim, e06oo3$7as$1 (AT) grapevine (DOT) wam.umd.edu and I cast no aspersions - another of your strawmen. The fact is that the data is not supported by the palpable results. |
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